LPF Optimization with Real Component S-Parameters in uSimmics (formerly QucsStudio) [2026]

Considerations

This guide extends the ideal-component LPF design introduced in the previous article by replacing ideal inductors and capacitors with real Murata component S-parameter data imported into uSimmics (formerly QucsStudio). The goal is to quantify the performance gap between ideal and real components and demonstrate how switching to a low-loss component grade closes that gap.

What You’ll Learn

  • Why real components differ from ideal ones (parasitic inductance and parasitic capacitance)
  • How to download and import Murata S-parameter data (.s2p) into uSimmics (formerly QucsStudio)
  • How the standard-grade components (GRM03, LQP03TG) affect LPF insertion loss
  • How switching to low-loss grades (GJM03, LQP03HQ) improves performance
  • How to quantitatively compare component grades in simulation

Background: The Gap Between Ideal and Real Components

The previous article (LPF Design Guide Using uSimmics (formerly QucsStudio) [2026]) designed a 915 MHz LPF using ideal lumped components. This article replaces those ideal components with real Murata parts to produce a simulation that more closely reflects actual hardware performance.


Why Use Real Component Models?

The capacitors and inductors available as lumped components in uSimmics (formerly QucsStudio) are ideal — they have no loss and no parasitic behavior. Real components include the following parasitic elements that become significant at GHz frequencies:

  • Parasitic inductance (ESL): Inductance in the electrodes and leads of chip capacitors
  • Parasitic capacitance: Inter-winding capacitance in chip inductors
  • DC resistance (DCR): Winding resistance of inductors, contributing to insertion loss

These parasitics increase passband insertion loss and alter attenuation characteristics, especially above a few hundred MHz.


Components and S-Parameter Acquisition

This simulation uses Murata chip capacitors (GRM03 series) and chip inductors (LQP03TG series) — standard parts widely used in wireless device design.

S-parameter download: Visit Murata’s SimSurfing portal to download S-parameter data (Touchstone .s2p format) for each part.

Standard-Grade Component List

Part Number Type Value
GRM0332C15R6BA01 Chip capacitor 5.6 pF
GRM0332C14R1BA01 Chip capacitor 4.1 pF
GRM0334C11R5BA01 Chip capacitor 1.5 pF
LQP03TG15NJ02 Chip inductor 15 nH
LQP03TG10NJ02 Chip inductor 10 nH
LQP03TG3N7B02 Chip inductor 3.7 nH

Procedure: Placing S-Parameter Components in the Schematic

Place the real-component LPF in parallel with the ideal-component LPF on the same schematic, then run a single S-parameter simulation to compare both.

  1. Open the LPF schematic from the previous article in uSimmics (formerly QucsStudio).
  2. From the Components panel under system components, select s-parameter file.
  3. Place an s-parameter file component on the schematic and double-click to open its properties.
  4. Set Ports to 2.
  5. Under File, select the downloaded .s2p file for the corresponding Murata part.
  6. Repeat for each component (C1, C2, C3, L1, L2, L3).
  7. Wire up the real-component LPF, connect it in parallel with the ideal-component circuit, and configure the S-parameter simulation to cover both.

Simulation Results — Standard Grade

Comparing S21 of the ideal LPF (red) and the standard-grade real-component LPF (blue):

At first glance, the real-component LPF appears to show higher attenuation at high frequencies, which might seem beneficial. However, a closer look at the passband (824–915 MHz) reveals that the real-component LPF has noticeably higher insertion loss.

Root Cause Analysis

With GRM03 capacitors and LQP03TG inductors, the passband insertion loss increases by approximately 2 dB compared to the ideal simulation. The main contributors are:

  • Equivalent series inductance (ESL) in capacitors increasing high-frequency loss
  • DC resistance (DCR) and inter-winding capacitance in inductors
  • Equivalent series resistance (ESR) in capacitors

A 2 dB passband degradation is meaningful — in a real application it can push performance outside specification.


Optimization: Switching to Low-Loss Component Grades

To reduce passband insertion loss, switch to lower-loss component grades:

  • Capacitors: GRM03 → GJM03 (reduced DC resistance and ESR)
  • Inductors: LQP03TG → LQP03HQ (higher Q factor, lower loss)

Low-Loss Grade Component List

Part Number Type Value
GJM0335C1E5R6BB01 Low-loss chip capacitor 5.6 pF
GJM0335C1E4R1BB01 Low-loss chip capacitor 4.1 pF
GJM0335C1E1R5BB01 Low-loss chip capacitor 1.5 pF
LQP03HQ15NH02 High-Q chip inductor 15 nH
LQP03HQ10NH02 High-Q chip inductor 10 nH
LQP03HQ3N7B02 High-Q chip inductor 3.7 nH

Re-Simulation Results — Low-Loss Grade

After switching to GJM03 capacitors and LQP03HQ inductors, the simulation shows performance approaching the ideal component results.

Metric Standard Grade Low-Loss Grade
Insertion loss vs. ideal ~2 dB gap ~1 dB gap
Passband compliance Risk of failing spec Within spec

The low-loss grade reduces the performance gap to approximately 1 dB.


Analysis and Design Implications

This result demonstrates the importance of selecting the appropriate component grade for the target performance specification. Simulating with ideal components alone masks the real-world performance gap. Real-component S-parameter simulation reveals it.

Benefits of incorporating real-component simulation into the design flow:
– Accurate performance prediction before fabrication
– Quantitative comparison of component grades
– Cost-vs-performance trade-off evaluation at the design stage


Summary

Real-component S-parameter simulation in uSimmics (formerly QucsStudio) is a critical tool for RF filter design that demands tight performance tolerances. Iterating component grade selection in simulation — standard grade first, low-loss grade if needed — is a systematic way to meet specification while controlling BOM cost. Combining ideal-component simulation with real-component simulation is the foundation of a reliable filter design methodology.


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